ELECTRICAL-PROPERTIES OF HETEROEPITAXIAL GE FILMS ON SI(100)-2X1 SURFACES

[1] STRAIN-INDUCED TWO-DIMENSIONAL ELECTRON-GAS IN SELECTIVELY DOPED SI/SIXGE1-X SUPERLATTICES [J]. PHYSICAL REVIEW LETTERS, 1985, 54 (22) : 2441 - 2444

[2] HETEROEPITAXIAL GROWTH OF GE FILMS ON THE SI(100)-2X1 SURFACE [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (07) : 2577 - 2583

[3] THE GROWTH OF NOVEL SILICON MATERIALS [J]. PHYSICS TODAY, 1986, 39 (10) : 36 - 42

[4] CONWELL EM, 1967, SOLID STATE PHYS S, V9, P1

[5] ELECTRONIC-STRUCTURE IN GAAS-GE THROUGH ANGLE-RESOLVED PHOTOEMISSION [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1501 - 1503

[6] GOSSMANN HJ, 1984, SURF SCI, V138, pL175, DOI 10.1016/0039-6028(84)90247-4

[7] GROSSMANN HJ, 1985, SURF SCI, V155, P413

[8] SI(111)(7X7)-GE AND SI(111)(5X5)-GE SURFACES STUDIED BY ANGLE-RESOLVED ELECTRON-ENERGY-LOSS SPECTROSCOPY [J]. PHYSICAL REVIEW B, 1985, 32 (10): : 6949 - 6951

[9] RHEED STUDY ON THE GE/SI(111) AND SI/GE(111) SYSTEMS - REACTION OF GE WITH THE SI(111)(7X7) SURFACE [J]. SURFACE SCIENCE, 1984, 136 (2-3) : 267 - 284

[10] INITIAL-STAGE OF HETEROEPITAXY OF GE ON SI(111)-7 X 7 AND (100)-2 X 1 SURFACES STUDIED BY LOW-ENERGY ELECTRON-LOSS SPECTROSCOPY (LEELS) [J]. SURFACE SCIENCE, 1988, 193 (1-2) : 193 - 211

[1] STRAIN-INDUCED TWO-DIMENSIONAL ELECTRON-GAS IN SELECTIVELY DOPED SI/SIXGE1-X SUPERLATTICES [J]. PHYSICAL REVIEW LETTERS, 1985, 54 (22) : 2441 - 2444

[2] HETEROEPITAXIAL GROWTH OF GE FILMS ON THE SI(100)-2X1 SURFACE [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (07) : 2577 - 2583

[3] THE GROWTH OF NOVEL SILICON MATERIALS [J]. PHYSICS TODAY, 1986, 39 (10) : 36 - 42

[4] CONWELL EM, 1967, SOLID STATE PHYS S, V9, P1

[5] ELECTRONIC-STRUCTURE IN GAAS-GE THROUGH ANGLE-RESOLVED PHOTOEMISSION [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1501 - 1503

[6] GOSSMANN HJ, 1984, SURF SCI, V138, pL175, DOI 10.1016/0039-6028(84)90247-4

[7] GROSSMANN HJ, 1985, SURF SCI, V155, P413

[8] SI(111)(7X7)-GE AND SI(111)(5X5)-GE SURFACES STUDIED BY ANGLE-RESOLVED ELECTRON-ENERGY-LOSS SPECTROSCOPY [J]. PHYSICAL REVIEW B, 1985, 32 (10): : 6949 - 6951

[9] RHEED STUDY ON THE GE/SI(111) AND SI/GE(111) SYSTEMS - REACTION OF GE WITH THE SI(111)(7X7) SURFACE [J]. SURFACE SCIENCE, 1984, 136 (2-3) : 267 - 284

[10] INITIAL-STAGE OF HETEROEPITAXY OF GE ON SI(111)-7 X 7 AND (100)-2 X 1 SURFACES STUDIED BY LOW-ENERGY ELECTRON-LOSS SPECTROSCOPY (LEELS) [J]. SURFACE SCIENCE, 1988, 193 (1-2) : 193 - 211