Near-edge x-ray absorption fine structure study of bonding modifications in BN thin films by ion implantation

被引：96

作者：

Jimenez, I

Jankowski, A

Terminello, LJ

Carlisle, JA

Sutherland, DGJ

Doll, GL

Mantese, JV

Tong, WM

Shuh, DK

Himpsel, FJ

机构：

[1] GM RES LAB,WARREN,MI 48090

[2] UNIV CALIF BERKELEY,LAWRENCE BERKELEY LAB,BERKELEY,CA 94720

[3] UNIV WISCONSIN,DEPT PHYS,MADISON,WI 53706

来源：

APPLIED PHYSICS LETTERS | 1996年 / 68卷 / 20期

关键词：

D O I：

10.1063/1.116334

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Near-edge x-ray absorption fine structure (NEXAFS) has been used to study the defect content and the bonding modifications induced in BN thin films by ion implantation. The initial films were hexagonal-like BN grown on Si(100) by pulsed laser deposition. Subsequent ion implantation with N-2(+) at 180 keV induces the formation of a significant proportion of sp(2) bonding (cubic-like), and the formation of nitrogen void defects in the remaining sp(2) BN. These modifications in the bonding of a film lacking long range order can only be distinguished with a local order technique like NEXAFS. (C) 1995 American Institute of Physics.

引用

页码：2816 / 2818

页数：3

共 16 条

[1]

AITA CR, 1990, MATER SCI FORUM, V54, P1

[2] ION-ASSISTED PULSED LASER DEPOSITION OF CUBIC BN FILMS ON SI (001) SUBSTRATES [J].