GROWTH OF BN BY HOT-FILAMENT ASSISTED ELECTRON-BEAM DEPOSITION

被引：12

作者：

MANORAMA, S ^{[1
]}

CHAUDHARI, GN ^{[1
]}

RAO, VJ ^{[1
]}

机构：

[1] INDIAN INST CHEM TECHNOL,DIV INORGAN & PHYS CHEM,MAT SCI GRP,HYDERABAD 500007,INDIA

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1993年 / 26卷 / 10期

关键词：

D O I：

10.1088/0022-3727/26/10/038

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thin films of BN were deposited using an electron beam for evaporating boron and a hot filament for activating N2. The IR spectrum of the deposited film on Si substrates showed a strong absorption at 1097 cm-1 clearly indicating a cubic structure. Scanning electron micrograph and x-ray diffraction patterns confirm the polycrystalline nature of the films. Raman spectra of the films showed peaks at 1056 and 1304 cm-1, which are the characteristic Raman lines for cubic boron nitride.

引用

页码：1793 / 1795

页数：3

共 15 条

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