Optimising the growth of pyramidal GaAs microstructures on pre-patterned GaAs(001) substrates

被引：12

作者：

Williams, RS ^{[1
]}

Ashwin, MJ ^{[1
]}

Neave, JH ^{[1
]}

Jones, TS ^{[1
]}

机构：

[1] Univ London Imperial Coll Sci Technol & Med, Dept Chem, Ctr Elect Mat & Devices, London SW7 2AY, England

来源：

JOURNAL OF CRYSTAL GROWTH | 2001年 / 227卷

关键词：

diffusion; low dimensional structures; surface processes; surface structure; molecular beam epitaxy; semiconducting III-V material;

D O I：

10.1016/S0022-0248(01)00632-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Facet formation during the growth by molecular beam epitaxy of GaAs microstructures on pre-patterned GaAs(0 0 1) substrates has been investigated by secondary electron microscopy and atomic force microscopy. The effects of the growth conditions have been studied for structures formed on both stripe and square based mesas. In all cases {1 1 0} facets are formed suggesting that kinetics plays a key role in determining the shape of the resulting microstructure. We show that by optimising the growth conditions it is possible to produce high quality pyramidal microstructures that appear to have the appropriate characteristics for application as a corner cube mirror in optoelectronic device applications. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：56 / 61

页数：6

共 17 条

[1]

BACCHIN G, 1998, P 2 S AT SCAL SURF I, P7

[2] FREE SURFACES AND MULTILAYER INTERFACES IN THE GAAS/ALAS SYSTEM [J].