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SELF-ALIGNED 3-DIMENSIONAL GA1-XALXAS STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY
被引:15
作者
:
NAGATA, S
论文数:
0
引用数:
0
h-index:
0
机构:
MATSUSHITA ELECT IND CO LTD, CENT RES LABS, MORIGUCHI, OSAKA 570, JAPAN
MATSUSHITA ELECT IND CO LTD, CENT RES LABS, MORIGUCHI, OSAKA 570, JAPAN
NAGATA, S
[
1
]
TANAKA, T
论文数:
0
引用数:
0
h-index:
0
机构:
MATSUSHITA ELECT IND CO LTD, CENT RES LABS, MORIGUCHI, OSAKA 570, JAPAN
MATSUSHITA ELECT IND CO LTD, CENT RES LABS, MORIGUCHI, OSAKA 570, JAPAN
TANAKA, T
[
1
]
FUKAI, M
论文数:
0
引用数:
0
h-index:
0
机构:
MATSUSHITA ELECT IND CO LTD, CENT RES LABS, MORIGUCHI, OSAKA 570, JAPAN
MATSUSHITA ELECT IND CO LTD, CENT RES LABS, MORIGUCHI, OSAKA 570, JAPAN
FUKAI, M
[
1
]
机构
:
[1]
MATSUSHITA ELECT IND CO LTD, CENT RES LABS, MORIGUCHI, OSAKA 570, JAPAN
来源
:
APPLIED PHYSICS LETTERS
|
1977年
/ 30卷
/ 10期
关键词
:
D O I
:
10.1063/1.89231
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:503 / 505
页数:3
相关论文
共 9 条
[1]
BERRY RW, 1968, THIN FILM TECHNOLOGY, P160
[2]
Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9
[3]
IMPURITY PROFILES OF GAAS EPITAXIAL LAYERS DOPED WITH SN, SI, AND GE GROWN WITH MOLECULAR-BEAM EPITAXY
CHO, AY
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
CHO, AY
[J].
JOURNAL OF APPLIED PHYSICS,
1975,
46
(04)
: 1733
-
1735
[4]
GROWTH OF 3-DIMENSIONAL DIELECTRIC WAVEGUIDES FOR INTEGRATED OPTICS BY MOLECULAR-BEAM EPITAXY METHOD
CHO, AY
论文数:
0
引用数:
0
h-index:
0
CHO, AY
REINHART, FK
论文数:
0
引用数:
0
h-index:
0
REINHART, FK
[J].
APPLIED PHYSICS LETTERS,
1972,
21
(08)
: 355
-
&
[5]
GAAS EPITAXY BY A MOLECULAR BEAM METHOD - OBSERVATIONS OF SURFACE STRUCTURE ON (001) FACE
CHO, AY
论文数:
0
引用数:
0
h-index:
0
CHO, AY
[J].
JOURNAL OF APPLIED PHYSICS,
1971,
42
(05)
: 2074
-
&
[6]
CHO AY, 1970, 3RD P INT S GAAS REL, P18
[7]
NEW HETEROISOLATION STRIPE-GEOMETRY VISIBLE LIGHT EMITTING LASERS
ITOH, K
论文数:
0
引用数:
0
h-index:
0
机构:
MATSUSHITA ELECTR CORP,RES LAB,TAKATSUKI,OSAKA,JAPAN
MATSUSHITA ELECTR CORP,RES LAB,TAKATSUKI,OSAKA,JAPAN
ITOH, K
INOUE, M
论文数:
0
引用数:
0
h-index:
0
机构:
MATSUSHITA ELECTR CORP,RES LAB,TAKATSUKI,OSAKA,JAPAN
MATSUSHITA ELECTR CORP,RES LAB,TAKATSUKI,OSAKA,JAPAN
INOUE, M
TERAMOTO, I
论文数:
0
引用数:
0
h-index:
0
机构:
MATSUSHITA ELECTR CORP,RES LAB,TAKATSUKI,OSAKA,JAPAN
MATSUSHITA ELECTR CORP,RES LAB,TAKATSUKI,OSAKA,JAPAN
TERAMOTO, I
[J].
IEEE JOURNAL OF QUANTUM ELECTRONICS,
1975,
QE11
(07)
: 421
-
426
[8]
SELECTIVE ETCHING OF GALLIUM ARSENIDE CRYSTALS IN H2SO4-H2O2-H2O SYSTEM
LIDA, S
论文数:
0
引用数:
0
h-index:
0
LIDA, S
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1971,
118
(05)
: 768
-
&
[9]
SELF-MASKING SELECTIVE EPITAXY BY MOLECULAR-BEAM METHOD
NAGATA, S
论文数:
0
引用数:
0
h-index:
0
机构:
MATSUSHITA ELECT IND CO LTD, CENT RES LABS, MORIGUCHI, OSAKA 570, JAPAN
MATSUSHITA ELECT IND CO LTD, CENT RES LABS, MORIGUCHI, OSAKA 570, JAPAN
NAGATA, S
TANAKA, T
论文数:
0
引用数:
0
h-index:
0
机构:
MATSUSHITA ELECT IND CO LTD, CENT RES LABS, MORIGUCHI, OSAKA 570, JAPAN
MATSUSHITA ELECT IND CO LTD, CENT RES LABS, MORIGUCHI, OSAKA 570, JAPAN
TANAKA, T
[J].
JOURNAL OF APPLIED PHYSICS,
1977,
48
(03)
: 940
-
942
←
1
→
共 9 条
[1]
BERRY RW, 1968, THIN FILM TECHNOLOGY, P160
[2]
Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9
[3]
IMPURITY PROFILES OF GAAS EPITAXIAL LAYERS DOPED WITH SN, SI, AND GE GROWN WITH MOLECULAR-BEAM EPITAXY
CHO, AY
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
CHO, AY
[J].
JOURNAL OF APPLIED PHYSICS,
1975,
46
(04)
: 1733
-
1735
[4]
GROWTH OF 3-DIMENSIONAL DIELECTRIC WAVEGUIDES FOR INTEGRATED OPTICS BY MOLECULAR-BEAM EPITAXY METHOD
CHO, AY
论文数:
0
引用数:
0
h-index:
0
CHO, AY
REINHART, FK
论文数:
0
引用数:
0
h-index:
0
REINHART, FK
[J].
APPLIED PHYSICS LETTERS,
1972,
21
(08)
: 355
-
&
[5]
GAAS EPITAXY BY A MOLECULAR BEAM METHOD - OBSERVATIONS OF SURFACE STRUCTURE ON (001) FACE
CHO, AY
论文数:
0
引用数:
0
h-index:
0
CHO, AY
[J].
JOURNAL OF APPLIED PHYSICS,
1971,
42
(05)
: 2074
-
&
[6]
CHO AY, 1970, 3RD P INT S GAAS REL, P18
[7]
NEW HETEROISOLATION STRIPE-GEOMETRY VISIBLE LIGHT EMITTING LASERS
ITOH, K
论文数:
0
引用数:
0
h-index:
0
机构:
MATSUSHITA ELECTR CORP,RES LAB,TAKATSUKI,OSAKA,JAPAN
MATSUSHITA ELECTR CORP,RES LAB,TAKATSUKI,OSAKA,JAPAN
ITOH, K
INOUE, M
论文数:
0
引用数:
0
h-index:
0
机构:
MATSUSHITA ELECTR CORP,RES LAB,TAKATSUKI,OSAKA,JAPAN
MATSUSHITA ELECTR CORP,RES LAB,TAKATSUKI,OSAKA,JAPAN
INOUE, M
TERAMOTO, I
论文数:
0
引用数:
0
h-index:
0
机构:
MATSUSHITA ELECTR CORP,RES LAB,TAKATSUKI,OSAKA,JAPAN
MATSUSHITA ELECTR CORP,RES LAB,TAKATSUKI,OSAKA,JAPAN
TERAMOTO, I
[J].
IEEE JOURNAL OF QUANTUM ELECTRONICS,
1975,
QE11
(07)
: 421
-
426
[8]
SELECTIVE ETCHING OF GALLIUM ARSENIDE CRYSTALS IN H2SO4-H2O2-H2O SYSTEM
LIDA, S
论文数:
0
引用数:
0
h-index:
0
LIDA, S
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1971,
118
(05)
: 768
-
&
[9]
SELF-MASKING SELECTIVE EPITAXY BY MOLECULAR-BEAM METHOD
NAGATA, S
论文数:
0
引用数:
0
h-index:
0
机构:
MATSUSHITA ELECT IND CO LTD, CENT RES LABS, MORIGUCHI, OSAKA 570, JAPAN
MATSUSHITA ELECT IND CO LTD, CENT RES LABS, MORIGUCHI, OSAKA 570, JAPAN
NAGATA, S
TANAKA, T
论文数:
0
引用数:
0
h-index:
0
机构:
MATSUSHITA ELECT IND CO LTD, CENT RES LABS, MORIGUCHI, OSAKA 570, JAPAN
MATSUSHITA ELECT IND CO LTD, CENT RES LABS, MORIGUCHI, OSAKA 570, JAPAN
TANAKA, T
[J].
JOURNAL OF APPLIED PHYSICS,
1977,
48
(03)
: 940
-
942
←
1
→