Electronic structure of the octagonal tiling

被引:6
作者
Zijlstra, ES [1 ]
机构
[1] Max Planck Inst Festkorperforsch, D-70506 Stuttgart, Germany
关键词
D O I
10.1016/j.jnoncrysol.2003.11.026
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
An s-band model on the octagonal tiling is studied. The matching rules, the inflation rules, and the standard approximants are reviewed. It is shown that in the approximants the matching rules are only slightly violated. Therefore electronic properties, e.g., the density of states (DOS), converge very fast w.r.t. the approximant size N, e.g., Delta(DOS) proportional to N-2. In the low kinetic-energy limit the electronic properties of the model are dominated by a one-dimensional aperiodic substitution chain. The Hamiltonian of this chain is given and spectral and transport properties are studied. It is shown that the support of the measure decreases as a power of the approximant size N. The conductance through a macroscopic cell (l similar to 0.2 mm) is shown to be finite. In the presence of a small random on-site potential (W = 0.01) the system becomes insulating. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:126 / 129
页数:4
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