A study on the short-circuit capability of field-stop IGBTs

被引：73

作者：

Otsuki, M ^{[1
]}

Onozawa, Y

Kanemaru, H

Seki, Y

Matsumoto, T

机构：

[1] Fuji Hitachi Power Semicond Co Ltd, Nagano 3900821, Japan

[2] Yamanashi Univ, Grad Sch Elect Engn, Kofu, Yamanashi 4008511, Japan

[3] Fuji Elect Co, Matsumoto Factory, Matsumoto, Nagano 3900821, Japan

[4] Fuji Elect Corp R&D Ltd, Matsumoto, Nagano 3900821, Japan

[5] Yamanashi Univ, Grad Sch Elect Engn, Kofu, Yamanashi 4008511, Japan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2003年 / 50卷 / 06期

关键词：

insulated gate bipolar transistor;

D O I：

10.1109/TED.2003.813505

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 [电气工程]; 0809 [电子科学与技术];

摘要：

The short-circuit failure mechanism of 1200 V trench gate field-stop insulated gate bipolar transistor (IGBT) has been investigated in this paper. Experimental testing shows that most of the devices failed during the blocking state after a few hundred microseconds of the short-circuit turn-off condition. This unusual failure mode was analyzed both with experimental and numerical investigation. It has been determined that due to significantly large leakage current, thermal run-away can occur causing device failure after short circuit turn-off. Due to smaller heat capacity of FS-IGBT structure, the device temperature after the turn-off becomes so high that the local heating produced by the high temperature leakage current results in the thermal run-away.

引用

页码：1525 / 1531

页数：7

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