Towards p-type ZnO using post-growth annealing

被引：15

作者：

Dangbegnon, J. K. ^{[1
]}

Roro, K. T. ^{[1
]}

Botha, J. R. ^{[1
]}

机构：

[1] Nelson Mandela Metropolitan Univ, Dept Phys, ZA-6031 Port Elizabeth, South Africa

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2008年 / 205卷 / 01期

关键词：

D O I：

10.1002/pssa.200776828

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The optical properties of zinc oxide (ZnO) films grown by metalorganic chemical vapor deposition on GaAs substrate are investigated. Samples were annealed in two different ambients, namely nitrogen and oxygen, and studied by photoluminescence (PL). Samples annealed in oxygen at 600 degrees C show arsenic acceptor-related signatures. The near-band-edge emission is dominated by an excitonic feature at 3.355 eV and compensation broadens the spectra. No such changes are observed when similar samples are annealed in nitrogen. The diffusion of arsenic from the GaAs substrate appears to be a source of acceptors. This effect is enhanced in an oxygen atmosphere.

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页码：155 / 158

页数：4

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