Analysis of cross relaxation between Tm3+ ions in PbO-Bi2O3-Ga2O3-GeO2 glass

被引:31
作者
Han, YS
Song, JH
Heo, J
机构
[1] Pohang Univ Sci & Technol, Ctr Informat Mat, Pohang 790784, Gyeongbuk, South Korea
[2] Pohang Univ Sci & Technol, Dept Mat Sci & Engn, Pohang 790784, Gyeongbuk, South Korea
关键词
D O I
10.1063/1.1595148
中图分类号
O59 [应用物理学];
学科分类号
摘要
Mechanisms of cross relaxation (H-3(4), H-3(6)-->F-3(4), F-3(4)) in Tm3+-doped PbO-Bi2O3-Ga2O3-GeO2 glass were analyzed. The energy gap between the absorption (H-3(6)-->F-3(4)) and emission (H-3(4)-->F-3(4)) spectra was approximately 600 cm(-1). A large decrease in cross relaxation rates at low temperatures indicated that cross relaxation is controlled by a phonon-assisted energy transfer. The bending vibration of the Ga-O-Ga bonds between GaO4 tetrahedra (similar to550 cm(-1)) was directly responsible for this energy transfer. Although GeO2 was added to enhance the thermal stability of PbO-Bi2O3-Ga2O3 glass, the phonon mode associated with vibration of GeO2 (similar to770 cm(-1)) was not involved in the cross relaxation process. (C) 2003 American Institute of Physics.
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页码:2817 / 2820
页数:4
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