Ka-band and MMIC pHEMT-based VCO's with low phase-noise properties

被引：20

作者：

Garner, PJ ^{[1
]}

Howes, MJ ^{[1
]}

Snowden, CM ^{[1
]}

机构：

[1] Univ Leeds, Sch Elect & Elect Engn, Inst Microwaves & Photon, Leeds LS2 9JT, W Yorkshire, England

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1998年 / 46卷 / 10期

关键词：

D O I：

10.1109/22.721161

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Two pseudomorphic high electron-mobility transistor (pHEMT)-based Ka-Band voltage-controlled oscillators (VCO's), which have exhibited novel close-to-carrier phase-noise properties in conjunction with output powers greater than previously reported heterojunction bipolar transistor (HBT)based oscillators, are presented in this paper, Good low phase noises of at least -70 and -75 dBc/Hz at an offset of 100 kHz around 38 GHz have been measured for the two different VCO designs over reasonable frequency tuning ranges with flat or linear output-power tuning in these ranges. Both designs show a strong dependence between phase noise and tuning-element bias conditions.

引用

页码：1531 / 1536

页数：6

共 13 条

[1]

COWLE J, 1995, IEEE INT MICR S ORL, V2, P689

[2]

FUNABASHI M, 1995, IEEE MIT S INT MICR, V2, P71

[3]

GARNER P, 1997, IEEE INT MICR S DENV, V2, P885

[4]

GUTTICH U, 1995, 25 EUR MICR C BOL IT, V1, P290

[5]

GUTTICH U, IEEE MTT S INT MICR, V1, P131

[6]

GUTTICH U, 1996, IEEE INT MICR S, V2, P495

[7]

GUTTICH U, 1994, 24 EUR MICR C CANN F, V1, P361

[8]

INOUE T, 1995, 25 EUR MICR C, V1, P281

[9]

KAWASAKI Y, 1995, 1995 IEEE MIT S INT, V2, P541

[10] KA-BAND MONOLITHIC INGAAS/INP HBT VCOS IN CPW STRUCTURE [J].

LIN, J ;

CHEN, YK ;

HUMPHREY, DA ;

HAMM, RA ;

MALIK, RJ ;

TATE, A ;

KOPF, RF ;

RYAN, RW .

IEEE MICROWAVE AND GUIDED WAVE LETTERS, 1995, 5 (11) :379-381

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