Deep levels in p- and n-type InGaAsN for high-efficiency multi-junction III-V solar cells

被引：61

作者：

Kaplar, RJ

Kwon, D

Ringel, SA ^{[1
]}

Allerman, AA

Kurtz, SR

Jones, ED

Sieg, RM

机构：

[1] Ohio State Univ, Dept Elect Engn, Columbus, OH 43210 USA

[2] Sandia Natl Labs, Albuquerque, NM 87185 USA

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2001年 / 69卷 / 01期

关键词：

InGaAsN; GaInNAs; MOCVD; DLTS; multi-junction solar cells;

D O I：

10.1016/S0927-0248(00)00380-9

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

DLTS measurements have been performed on InGaAsN. Four hole traps have been identified in 1.05 eV, p-type InGaAsN and the removal of a midgap trap ( similar to 0.5 eV) during annealing has been correlated with improved bulk material properties. Improvements in MOCVD growth conditions resulted in a reduction of trap density in 1.05 eV, p-type InGaAsN. Increased indium and nitrogen composition has been correlated with higher defect concentrations in p-type InGaAsN. Two electron traps have been identified in 1.15 eV, n-type InGaAsN and annealing was found to reduce the density of the shallow electron trap. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：85 / 91

页数：7

共 6 条

[1]

CHIANG PK, 1996, 25 IEEE PHOT SPEC C, P183

[2]

Kurtz S.R., 1997, 26 IEEE PHOT SPEC C, P875

[3] InGaAsN solar cells with 1.0 eV band gap, lattice matched to GaAs [J].