Development of a ChemFET sensor with molecular films of porphyrins as sensitive layer

被引：40

作者：

Andersson, M

Holmberg, M

Lundström, I

Lloyd-Spetz, A

Mårtensson, P

Paolesse, R

Falconi, C

Proietti, E

Di Natale, C

D'Amico, A

机构：

[1] Univ Roma Tor Vergata, Dept Elect Engn, I-00133 Rome, Italy

[2] Univ Roma Tor Vergata, Dept Chem Sci & Technol, I-00133 Rome, Italy

[3] Nord Sensors Technol AB, S-58330 Linkoping, Sweden

[4] Linkoping Univ, IFM, Appl Phys Lab, S-58183 Linkoping, Sweden

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 2001年 / 77卷 / 1-2期

关键词：

ChemFET sensor; palladium gate; porphyrins films;

D O I：

10.1016/S0925-4005(01)00691-8

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

The interaction of chemical species with molecular films of porphyrins causes variations of the work function of the film itself, as it has been recently demonstrated by using the Kelvin probe technique. This characteristic makes porphyrins films suitable to be used as sensitive layers in ChemFET sensors. In this paper, we present a preliminary report about the fabrication and testing of such gas sensitive devices. The technological solutions towards an optimised device are also illustrated and discussed. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：567 / 571

页数：5

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