Deep-ultraviolet interferometric lithography as a tool for assessment of chemically amplified photoresist performance

被引：183

作者：

Hinsberg, W ^{[1
]}

Houle, FA ^{[1
]}

Hoffnagle, J ^{[1
]}

Sanchez, M ^{[1
]}

Wallraff, G ^{[1
]}

Morrison, M ^{[1
]}

Frank, S ^{[1
]}

机构：

[1] IBM Corp, Almaden Res Ctr, San Jose, CA 95120 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1998年 / 16卷 / 06期

关键词：

D O I：

10.1116/1.590392

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The precise control of the exposure step provided by interferometric photolithography facilitates studies of chemically amplified resist physics, chemistry, and functional properties that are difficult using more conventional exposure techniques. We describe here the design and operating characteristics of a deep-ultraviolet interferometric lithography tool designed specifically for the study of high resolution chemically amplified resists. We provide an example of its use to evaluate resist response to controlled variations in aerial image contrast. (C) 1998 American Vacuum Society. [S0734-211X(98)15506-3].

引用

页码：3689 / 3694

页数：6

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