The effect of increased valence band offset on the operation of 2 μm GaInAsSb-AlGaAsSb lasers

被引：37

作者：

Newell, T ^{[1
]}

Wu, X

Gray, AL

Dorato, S

Lee, H

Lester, LF

机构：

[1] Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA

[2] USA, Res Lab, Adelphi, MD 20783 USA

[3] USAF, Res Lab, Kirtland AFB, NM 87117 USA

[4] David Sarnoff Res Ctr, Princeton, NJ 08453 USA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1999年 / 11卷 / 01期

关键词：

gallium antimonide; quantum-well devices; quantum-well lasers; semiconductor lasers;

D O I：

10.1109/68.736380

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Two and four quantum-well (QW) GaInAsSb-AlGaAsSb lasers emitting at 2 mu m are reported. In comparison to previously published data, it is found that higher Al content in the QW barrier improves the internal efficiency,saturated modal gain, and characteristic temperature of the lasers, These results are attributed to an increased valence band offset that provides superior hole confinement in the GaInAsSb QW, A differential efficiency of 74% is observed at 25 degrees C under pulsed conditions for a 900-mu m cavity length, 2-QW device, and a record characteristic temperature of 140 K is measured for a 4-QW laser.

引用

页码：30 / 32

页数：3

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