An alloy semiconductor system with a tailorable band-tail and its application to high-performance laser operation: II. Experimental study on InGaN MQW laser for optimization of differential gain characteristics tuned by In compositional fluctuation

被引：11

作者：

Kuramoto, M ^{[1
]}

Hisanaga, Y ^{[1
]}

Kimura, A ^{[1
]}

Futagawa, N ^{[1
]}

Yamaguchi, AA ^{[1
]}

Nido, M ^{[1
]}

Mizuta, M ^{[1
]}

机构：

[1] NEC Corp Ltd, Syst Devices & Fundamental Res, Tsukuba, Ibaraki 3058501, Japan

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2001年 / 16卷 / 09期

关键词：

D O I：

10.1088/0268-1242/16/9/306

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Differential gain and carrier lifetime have, been deduced experimentally for InGaN MQWs having different magnitudes of In compositional fluctuation and defect density in the active layer. It has been found that the compositional fluctuation and differential gain show a strong correlation in full accordance with the theoretical model for a band-tail modified by In compositional fluctuation as described in the companion paper (part I). Several laser characteristics, threshold current density, differential gain and response time, were found to be affected by the compositional fluctuation and defect density. The optimization of these growth parameters for producing high-performance blue-violet InGaN MQW LDs is also discussed.

引用

页码：770 / 775

页数：6

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