High-quality passivated rear contact structure for silicon solar cells based on simple mechanical abrasion

被引：8

作者：

Metz, A ^{[1
]}

Hezel, R ^{[1
]}

机构：

[1] ISFH Germany, D-31860 Emmerthal, Germany

来源：

CONFERENCE RECORD OF THE TWENTY-EIGHTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 2000 | 2000年

关键词：

D O I：

10.1109/PVSC.2000.915781

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Recently, a novel easy-to-fabricate passivated rear contact structure has been developed at ISFH. Simple mechanical abrasion is applied to form line-shaped contact openings in a previously deposited surface-passivating dielectric layer. This simple approach avoids any photolithographical processing and back surface field formation. The influence of mechanically induced crystal defects is discussed. Comparison of cell results to photolithographically defined point contact schemes shows equally high solar cell performance. By applying the novel rear surface structure efficiencies of 21% and 20% have been achieved for laboratory size 4 cm(2) and industrial size 10 x 10 cm(2) solar cells, respectively.

引用

页码：172 / 175

页数：4