Optical properties of Zn1-xMnxSe (x ≤ 0.78) epilayers

被引:17
作者
Hung, WK [1 ]
Chern, MY
Chen, YF
Chou, WC
Yang, CS
Cheng, CC
Shen, JL
机构
[1] Natl Taiwan Univ, Dept Phys, Taipei 106, Taiwan
[2] Chung Yuan Christian Univ, Dept Phys, Chungli, Taiwan
关键词
semiconductors; electronic band structure; optical properties;
D O I
10.1016/S0038-1098(01)00399-4
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The optical properties of Zn1-xMnxSe with x up to 0.78 grown by molecular beam epitaxy on GaAs (001) substrates are reported. The complex dielectric functions epsilon = epsilon (1) + i epsilon (2) are obtained by spectroscopic ellipsometry in the photon range from 3.5 to 5.5 eV at room temperature. The critical-point energies E-1 and E-1 + Delta (1) for x less than or equal to 0.52 are determined by fitting the calculated second-derivative spectra of e to the standard line shape. For the sample with x = 0.78, the peak position in the E, spectrum is taken as an estimate for E-1. While the fundamental band gap E-0 increases with x, the E-1 and E-1 + Delta (1) energies decrease almost linearly with x. Comparing our results with those of the other experimental and theoretical studies, we consider the sp-d hybridization between the Mn 3d level and the sp band states to be an important factor affecting the band structures at the L point in the Brillouin zone over the whole range of Mn concentration. (C) 2001 Published by Elsevier Science Ltd.
引用
收藏
页码:311 / 315
页数:5
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