The effect of Zr on the microstructure of Ba(Ti1-yZry)O3 thin films prepared by chemical-solution deposition

被引:8
作者
Gui, JN
Jia, CL
Hoffmann, S
Waser, R
机构
[1] Forschungszentrum Julich, Inst Festkorperforsch, D-52425 Julich, Germany
[2] Wuhan Univ, Dept Phys, Wuhan 430072, Peoples R China
[3] Rhein Westfal TH Aachen, Inst Werkstoffe Elektrotech, D-52056 Aachen, Germany
关键词
BaTi1-yZryO3; thin films; microstructure; TEM; chemical solution deposition;
D O I
10.1016/S0167-577X(97)00281-4
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The microstructure of BaTi1-yZryO3 (y = 0, 0.15, 0.3) thin films prepared by a chemical-solution deposition technique has been studied by means of transmission electron microscopy. In the BaTiO3 films, grains and cavities are polyhedral in shape. Twins and stacking faults occur. Some of them terminate in the interior of a grain. A substitution of Ti by Zr in BaTiO3 makes the grains and cavities round and suppresses the formation of the twins and stacking faults. With a Zr content of y = 0.3 the film becomes free of twin and stacking faults and exhibits a columnar grain morphology. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:375 / 379
页数:5
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