Ground-state emission and gain in ultralow-threshold InAs-InGaAs quantum-dot lasers

被引：91

作者：

Eliseev, PG ^{[1
]}

Li, H

Liu, GT

Stintz, A

Newell, TC

Lester, LF

Malloy, KJ

机构：

[1] Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA

[2] Russian Acad Sci, PN Lebedev Phys Inst, Moscow 117924, Russia

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2001年 / 7卷 / 02期

关键词：

laser diodes; optical gain; quantum dots; semiconductor lasers; threshold current;

D O I：

10.1109/2944.954121

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Emission spectra and modal optical gain are investigated in ultralow-threshold MBE-grown InAs-InGaAs quantum dot (QD) structures. The record lowest room-temperature inversion current is found to be similar to 13 A cm(-2). The rate-equation model is proposed describing the optical gain related to the ground-state (GS) transitions in QDs. The ground-state gain goes to the maximum value that corresponds to the total inversion of available levels. The gain cross section for the GS emission is estimated as similar to 7 x 10(-15) cm(2).

引用

页码：135 / 142

页数：8

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