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Very fast metal-semiconductor-metal ultraviolet photodetectors on GaN with submicron finger width

被引：28
作者：
Li, JL
Donaldson, WR
Hsiang, TY
机构：
[1] Univ Rochester, Laser Energet Lab, Mat Sci Program, Rochester, NY 14623 USA
[2] Univ Rochester, Dept Elect & Comp Engn, Rochester, NY 14623 USA
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 2003年 / 15卷 / 08期
关键词：
Schottky diodes; photodetectors; UHF devices; high-speed electronics; semiconductor device packaging;
D O I：
10.1109/LPT.2003.815312
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We measured in the time domain fast metal-semiconductor-metal ultraviolet photodetectors fabricated on GaN with finger width and pitch ranging from 0.3 to 5 mum. A broad-band circuit was designed to couple out the short electrical pulse. The minimum temporal resolution between consecutive optical pulses was 26 ps. At low illumination levels, the bandwidth of the response was limited by the measurement system, not the device. At high illuminations, recovery of diode became slower, consistent with the space-charge screening effect caused by the photogenerated carriers.
引用
收藏
页码：1141 / 1143
页数：3
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