High-speed visible-blind GaN-based indium-tin-oxide Schottky photodiodes

被引：62

作者：

Biyikli, N ^{[1
]}

Kartaloglu, T

Aytur, O

Kimukin, I

Ozbay, E

机构：

[1] Bilkent Univ, Dept Elect & Elect Engn, TR-06533 Bilkent, Turkey

[2] Bilkent Univ, Dept Phys, TR-06533 Bilkent, Turkey

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 17期

关键词：

D O I：

10.1063/1.1412592

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have fabricated GaN-based high-speed ultraviolet Schottky photodiodes using indium-tin-oxide (ITO) Schottky contacts. Before device fabrication, the optical transparency of thin ITO films in the visible-blind spectrum was characterized via transmission and reflection measurements. The devices were fabricated on n-/n+ GaN epitaxial layers using a microwave compatible fabrication process. Our ITO Schottky photodiode samples exhibited a maximum quantum efficiency of 47% around 325 nm. Time-based pulse-response measurements were done at 359 nm. The fabricated devices exhibited a rise time of 13 ps and a pulse width of 60 ps. (C) 2001 American Institute of Physics.

引用

页码：2838 / 2840

页数：3

共 21 条

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