45-GHz bandwidth-efficiency resonant-cavity-enhanced ITO-Schottky photodiodes

被引：22

作者：

Biyikli, N ^{[1
]}

Kimukin, I

Aytür, O

Gökkavas, M

Ünlü, MS

Ozbay, E

机构：

[1] Bilkent Univ, Dept Elect Engn, TR-06533 Bilkent, Turkey

[2] Bilkent Univ, Dept Phys, TR-06533 Bilkent, Turkey

[3] Boston Univ, Dept Elect & Comp Engn, Boston, MA 02215 USA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2001年 / 13卷 / 07期

基金：

美国国家科学基金会;

关键词：

bandwidth-efficiency; high-speed; indium-tin-oxide; photodides; photodetectors; resonant-cavity enhancement; Schottky photodiode;

D O I：

10.1109/68.930421

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-speed Schottky photodiodes suffer from low efficiency mainly due to the thin absorption layers and the semitransparent Schottky-contact metals. We have designed, fabricated and characterized high-speed and high-efficiency AlGaAs-GaAs-based Schottky photodiodes using transparent indium-tin-oxide Schottky contact material and resonant cavity enhanced detector structure. The measured devices displayed resonance peaks around 820 nm with 75% maximum peak efficiency and an experimental setup limited temporal response of 11 ps pulsewidth. The resulting 45-GHz bandwidth-efficiency product obtained from these devices corresponds to the best performance reported to date for vertically illuminated Schottky photodiodes,

引用

页码：705 / 707

页数：3

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[2]

Bowers J.E., 1995, HDB OPTICS, V2nd

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