100-GHz resonant cavity enhanced Schottky photodiodes

被引:32
作者
Onat, BM [1 ]
Gokkavas, M
Ozbay, E
Ata, EP
Towe, E
Unlu, MS
机构
[1] Boston Univ, Dept Elect & Comp Engn, Boston, MA 02215 USA
[2] Bilkent Univ, Dept Phys, TR-06533 Ankara, Turkey
[3] Univ Virginia, Charlottesville, VA 22903 USA
关键词
high-speed; photodetector; resonant cavity enhancement; Schottky photodiode;
D O I
10.1109/68.669338
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Resonant cavity enhanced (RCE) photodiodes are promising candidates for applications in optical communications and interconnects where ultrafast high-efficiency detection is desirable. We have designed and fabricated RCE Schottky photodiodes in the (Al, In) GaAs material system for 900-nm wavelength. The observed temporal response with 10-ps pulsewidth was limited by the measurement setup and a conservative estimation of the bandwidth corresponds to more than 100 GHz. A direct comparison of RCE versus conventional detector performance was performed by high speed measurements under optical excitation at resonant wavelength (895 nm) and at 840 nm where the device functions as a single-pass conventional photodiode. A more than two-fold bandwidth enhancement with the RCE detection scheme was demonstrated.
引用
收藏
页码:707 / 709
页数:3
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