Resolving ions and vacancies at step edges on insulating surfaces

被引：15

作者：

Barth, C ^{[1
]}

Reichling, M ^{[1
]}

机构：

[1] Univ Munich, Dept Chem, D-81377 Munich, Germany

来源：

SURFACE SCIENCE | 2000年 / 470卷 / 1-2期

关键词：

atomic force microscopy; step formation and bunching; surface structure; morphology; roughness; and topography; halides; low index single crystal surfaces; stepped single crystal surfaces; surface defects;

D O I：

10.1016/S0039-6028(00)00916-X

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Surfaces of BaF2 and SrF2 prepared by cleavage along (1 1 1) planes in ultra-high vacuum were investigated with a dynamic scanning force microscope operated in the constant frequency detuning mode. We observe an atomic corrugation of some 10 pm on terraces and demonstrate that individual ions and vacancies can be resolved at step edges. Step edges do not necessarily follow low index crystallographic directions but may exhibit significant roughness on the atomic scale. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：L99 / L103

页数：5

共 7 条

[1] Bulk and surface processes in low-energy-electron-induced decomposition of CaF2 [J].