Metal-insulator transitions in an expanding metallic fluid: Particle formation kinetics

被引:41
作者
Glover, TE [1 ]
Ackerman, GD
Belkacem, A
Heimann, PA
Hussain, Z
Lee, RW
Padmore, HA
Ray, C
Schoenlein, RW
Steele, WF
Young, DA
机构
[1] Univ Calif Berkeley, Lawrence Berkeley Lab, Adv Light Source Div, Berkeley, CA 94720 USA
[2] Univ Calif Berkeley, Lawrence Berkeley Lab, Div Chem Sci, Berkeley, CA 94720 USA
[3] Univ Calif Berkeley, Lawrence Berkeley Lab, Div Mat Sci, Berkeley, CA 94720 USA
[4] Lawrence Livermore Natl Lab, Dept Phys, Livermore, CA 94550 USA
关键词
D O I
10.1103/PhysRevLett.90.236102
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Core-level photoemission spectroscopy provides a local probe of expansion dynamics and associated transient chemical properties as a highly pressurized, metallic fluid expands into vacuum following impulsive heating of a semiconductor by an intense, ultrashort laser pulse. Transient photoemission peak shifts reveal that metal-insulator transitions occur rapidly following laser heating. These experiments probe constituents species and solidification kinetics occurring in the early moments of material ejection and provide insight into how particles arise in the current laser ablation regime.
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页数:4
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共 25 条
[1]   WORK FUNCTION, PHOTOELECTRIC THRESHOLD, AND SURFACE STATES OF ATOMICALLY CLEAN SILICON [J].
ALLEN, FG ;
GOBELI, GW .
PHYSICAL REVIEW, 1962, 127 (01) :150-&
[2]   MELTING MODEL FOR PULSING-LASER ANNEALING OF IMPLANTED SEMICONDUCTORS [J].
BAERI, P ;
CAMPISANO, SU ;
FOTI, G ;
RIMINI, E .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) :788-797
[3]   A NEW METHOD FOR DETERMINING RELAXATION ENERGIES BY MEANS OF AES AND XPS AND ITS APPLICATION TO SILICON-COMPOUNDS [J].
BECHSTEDT, F ;
ENDERLEIN, R ;
FELLENBERG, R ;
STREUBEL, P ;
MEISEL, A .
JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1983, 31 (02) :131-143
[4]   ELECTRONIC POLARIZATION (RELAXATION) EFFECTS IN THE CORE LEVEL SPECTRA OF SEMICONDUCTORS .1. GENERAL-THEORY OF ELECTRONIC POLARIZATION (RELAXATION) IN SEMICONDUCTORS [J].
BECHSTEDT, F ;
ENDERLEIN, R .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1979, 94 (01) :239-248
[5]   RAPID MELTING AND REGROWTH VELOCITIES IN SILICON HEATED BY ULTRAVIOLET PICOSECOND LASER-PULSES [J].
BUCKSBAUM, PH ;
BOKOR, J .
PHYSICAL REVIEW LETTERS, 1984, 53 (02) :182-185
[6]  
CAMPAGNA M, 1990, PHOTOEMISSION ABSORP
[7]   Femtosecond melting and ablation of semiconductors studied with time of flight mass spectroscopy [J].
Cavalleri, A ;
Sokolowski-Tinten, K ;
Bialkowski, J ;
Schreiner, M ;
von der Linde, D .
JOURNAL OF APPLIED PHYSICS, 1999, 85 (06) :3301-3309
[8]   UNDERCOOLING OF MOLTEN SILICON [J].
DEVAUD, G ;
TURNBULL, D .
APPLIED PHYSICS LETTERS, 1985, 46 (09) :844-845
[9]  
Doremus R.H., 1985, Rates of Phase Transformations, V1st ed.
[10]   FEMTOSECOND IMAGING OF MELTING AND EVAPORATION AT A PHOTOEXCITED SILICON SURFACE [J].
DOWNER, MC ;
FORK, RL ;
SHANK, CV .
JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, 1985, 2 (04) :595-599