Magnetic properties and imaging of Mn-implanted GaAs semiconductors

被引：44

作者：

Shi, J

Kikkawa, JM

Awschalom, DD

MedeirosRibeiro, G

Petroff, PM

Babcock, K

机构：

[1] UNIV CALIF SANTA BARBARA,DEPT MAT,SANTA BARBARA,CA 93106

[2] DIGITAL INSTRUMENTS,SANTA BARBARA,CA 93111

来源：

JOURNAL OF APPLIED PHYSICS | 1996年 / 79卷 / 08期

关键词：

D O I：

10.1063/1.361356

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Submicron ferromagnets have been successfully incorporated into GaAs semiconductors by Mn+ ion implantation and subsequent heat treatment. Transmission electron microscopy, x-ray fluorescence spectrum analysis, and atomic force microscopy are used to structurally characterize the GaMn precipitates which form within the GaAs matrix. These crystallites are room-temperature ferromagnets with controllable magnetic properties. Magnetic force microscopy images reveal that unmagnetized samples contain both magnetic dipoles and quadrupoles, but that after magnetization the single-domain state predominates. (C) 1996 American Institute of Physics.

引用

页码：5296 / 5298

页数：3

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