Tip-induced formation of nanometer-sized metal clusters

被引：37

作者：

Ziegler, JC ^{[1
]}

Engelmann, GE ^{[1
]}

Kolb, DM ^{[1
]}

机构：

[1] Univ Ulm, Dept Electrochem, D-89069 Ulm, Germany

来源：

ZEITSCHRIFT FUR PHYSIKALISCHE CHEMIE-INTERNATIONAL JOURNAL OF RESEARCH IN PHYSICAL CHEMISTRY & CHEMICAL PHYSICS | 1999年 / 208卷

关键词：

electrochemistry; metal clusters; metal deposition; nanomodification; scanning tunneling microscopy;

D O I：

10.1524/zpch.1999.208.Part_1_2.151

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The tip of a scanning tunneling microscope has been used to deposit nanometer-sized copper and palladium clusters on flat gold electrode surfaces at predetermined positions. This allows the decoration of electrode surfaces on a nanometer scale. The mechanism of this tip-induced cluster formation will be discussed and several examples of an electrochemical nanostructuring of surfaces are given. Results from a preliminary STM study of metal deposition on n-Si(111) are included.

引用

页码：151 / 166

页数：16

共 44 条

[1] ETCHING OF SILICON IN NAOH SOLUTIONS .1. INSITU SCANNING TUNNELING MICROSCOPIC INVESTIGATION OF N-SI(111)
ALLONGUE, P
COSTAKIELING, V
GERISCHER, H
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1993, 140 (04) : 1009 - 1018
[2] Allongue P, 1995, NATO ADV SCI INST SE, V288, P45
[3] INSITU STM OBSERVATIONS OF THE ETCHING OF N-SI(111) IN NAOH SOLUTIONS
ALLONGUE, P
BRUNE, H
GERISCHER, H
[J]. SURFACE SCIENCE, 1992, 275 (03) : 414 - 423
[4] SCHOTTKY-BARRIER FORMATION OF VARIOUS METALS ON N-GAAS(100) BY ELECTROCHEMICAL DEPOSITION
ALLONGUE, P
SOUTEYRAND, E
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (06): : 1644 - 1649
[5] ALLONGUE P, 1995, ADV ELEC SC, V4, P1
[6] [Anonymous], POROUS SILICON SCI T
[7] BALDAUF M, 1996, THESIS U ULM
[8] INFRARED-SPECTROSCOPY OF SI(111) SURFACES AFTER HF TREATMENT - HYDROGEN TERMINATION AND SURFACE-MORPHOLOGY
BURROWS, VA
CHABAL, YJ
HIGASHI, GS
RAGHAVACHARI, K
CHRISTMAN, SB
[J]. APPLIED PHYSICS LETTERS, 1988, 53 (11) : 998 - 1000
[9] SCHOTTKY-BARRIER HEIGHT AND REVERSE CURRENT OF THE N-SI-ELECTROLYTE JUNCTION
CHAZALVIEL, JN
[J]. SURFACE SCIENCE, 1979, 88 (01) : 204 - 220
[10] PREPARATION OF MONO-CRYSTALLINE PT MICROELECTRODES AND ELECTROCHEMICAL STUDY OF THE PLANE SURFACES CUT IN THE DIRECTION OF THE (111) AND (110) PLANES
CLAVILIER, J
FAURE, R
GUINET, G
DURAND, R
[J]. JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 1980, 107 (01): : 205 - 209

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