Optical hall effect in hexagonal InN

被引：35

作者：

Hofmann, T. ^{[1
,2
]}

Darakchieva, V. ^{[3
]}

Monemar, B. ^{[3
]}

Lu, H. ^{[4
]}

Schaff, W. J. ^{[4
]}

Schubert, M. ^{[1
,2
]}

机构：

[1] Univ Nebraska, Dept Elect Engn, Lincoln, NE 68588 USA

[2] Univ Nebraska, Nebraska Ctr Mat & Nanosci, Lincoln, NE 68588 USA

[3] Linkoping Univ, Dept Phys Chem & Biol, Linkoping, Sweden

[4] Cornell Univ, Dept Elect & Comp Engn, Ithaca, NY USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2008年 / 37卷 / 05期

关键词：

InN; electronic properties; electron effective mass; infrared and THz magneto-optic ellipsometry;

D O I：

10.1007/s11664-008-0385-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Measurements of the optical Hall effect in naturally doped high-quality wurtzite-structure InN thin films by generalized ellipsometry reveal that both the surface and the interior (bulk) free electron densities decrease with power-law dependencies on the film thickness. We discover a significant deviation between the bulk electron and dislocation densities. This difference is attributed here to the existence of surface defects with activation mechanism different from bulk dislocations and identifies the possible origin of the so far persistent natural n-type conductivity in InN. We further quantify the anisotropy of the Gamma-point effective mass.

引用

页码：611 / 615

页数：5

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