Electron concentration and mobility profiles in InN layers grown by MBE

被引：4

作者：

Arnaudov, B. ^{[1
]}

Paskova, T.

Evtimova, S.

Monemar, B.

Lu, H.

Schaff, W. J.

机构：

[1] Univ Sofia, Fac Phys, Sofia 1164, Bulgaria

[2] Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden

[3] Cornell Univ, Dept Elect & Comp Engn, Ithaca, NY 14853 USA

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2006年 / 203卷 / 07期

关键词：

D O I：

10.1002/pssa.200565265

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have studied depth distributions of the electrical parameters in MBE grown InN films with two types of AlN and GaN buffers. Using independently determined Hall effect electron concentration and mobility profiles, as well as electron concentration profile by photoluminescence measurements, we model the real depth profile of carrier mobility, assuming graded inhomogeneity of the sample. The obtained profiles follow power dependences of the same order for layers grown on the two buffers with a small difference in the function coefficients attributed to a contribution of the interface charge in layers grown on AlN buffers. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：1681 / 1685

页数：5

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