Surface conductivity of epitaxial InN

被引：18

作者：

Cimalla, V ^{[1
]}

Ecke, G ^{[1
]}

Niebelschütz, M ^{[1
]}

Ambacher, O ^{[1
]}

Goldhahn, R ^{[1
]}

Lu, H ^{[1
]}

Schaff, WJ ^{[1
]}

机构：

[1] Tech Univ Ilmenau, Ctr Micro & Nanotechnol, D-98693 Ilmenau, Germany

来源：

PHYSICA STATUS SOLIDI C - CONFERENCES AND CRITICAL REVIEWS, VOL 2, NO 7 | 2005年 / 2卷 / 07期

关键词：

D O I：

10.1002/pssc.200461448

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The electron accumulation at the surface of oxidised InN layers has been investigated by resistance measurements and simultaneous sputtering by Ar+ ions under gracing incidence. The removal of InN decreases continuously the cross section of the conductive InN layer on the insulating substrate. From the measurements the depth profile of the free electron concentration was derived and an excess sheet carrier density at the surface of 2.2 x 10(13) cm(-2) was estimated. The agreement of the Auger oxygen depth profiles and the free electron concentration profile motivates the conclusion that oxygen is responsible for the high surface conductivity of InN layers exposed to air. (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：2254 / 2257

页数：4

共 7 条

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