Effect of carrier gas on chemical vapor deposition of copper with (hexafluoroacetylacetonate) Cu(I)(3,3-dimethyl-1-bulene)

The effect of carrier gases, such as argon, nitrogen, and hydrogen on the deposition rate. film morphology, resistivity, and chemical composition of copper films deposited with (hfac: hexafluoroacetylacetonate)Cu-(1)(DMB: 3,3-dimethyl-1-butene) precursor was investigated at substrate temperatures between 100 and 275 degreesC. The deposition rate was the highest and the resistivity was the lowest with the: hydrogen carrier gas and the film had the smallest amount of impurities such as carbon, oxygen, and fluorine. It is believed that hydrogen enhances the surface reaction and forms more volatile species with impurity atoms. The diffusion of the reactant in hydrogen gas is higher, which also leads to the higher deposition rate. Below the substrate temperature of 150 degreesC, the activation energy of the deposition rate was about 150 kJ mol(-1) on thermal oxide and about 84 similar to 96 kJ mol(-1) on TiN with both argon and nitrogen, but it is about 54 kJ mol(-1) with hydrogen carrier gas on both surfaces. The copper him deposited with hydrogen carrier gas has a higher ratio of the Cu(111) peak intensity to the Cu(200) peak intensity than in argon carrier gas. (C) 2001 The Electrochemical Society. [DOI: 10.1149/1.1375168] All rights: reserved.