Hexafluoroacetylacetonate Cu vinylcyclohexane as a liquid precursor for low-temperature chemical vapor deposition of copper thin films

An organometallic precursor, hexafluoroacetylacetonate Cu vinylcyclohexane, was studied for metallorganic chemical vapor deposition of copper thin films. It was found that copper films could be deposited at the substrate temperature of 75-250 degrees C. The copper films contained no detectable impurities as measured by Auger electron spectroscopy and had a resistivity of about 2.0 m Omega cm in the deposition temperature range 100 to 175 degrees C. No appreciable amount of precipitation was observed after a 2 month storage in a glove box. It is believed that the ring compound in the ligand tends to stabilize the precursor in the liquid phase. (C) 1999 The Electrochemical Society. S1099-0062(98)07-109-0. All rights reserved.