Prism - A tool for modelling proton energy deposition in semi-conductor materials

This paper presents a description of, and test results from, a new PC based software simulation tool PRISM (Protons In Semiconductor Materials). The model describes proton energy deposition in complex 3D ''sensitive volumes'' of semiconductor materials. PRISM is suitable for simulating energy deposition in surface-barrier detectors and semiconductor memory devices, the latter being susceptible to Single-Event Upset (SEU) and Multiple-Bit Upset (MBU). The design methodology on which PRISM is based, together with the techniques used to simulate ion transport and energy deposition, are described. Preliminary test results used to analyse the PRISM model are presented and the behavior of a payload on board a UoSAT class micro-satellite, simulated.