Structure and photocatalytic performances of glass/SnO2/TiO2 interface composite film

被引:150
作者
Shang, J
Yao, WQ
Zhu, YF [1 ]
Wu, NZ
机构
[1] Tsinghua Univ, Dept Chem, Beijing 100084, Peoples R China
[2] Peking Univ, State Key Lab Struct Chem Unstable & Stable Speci, Beijing 100871, Peoples R China
基金
中国国家自然科学基金;
关键词
SnO2/TiO2; charge transfer; interface; photocatalytic activity;
D O I
10.1016/j.apcata.2003.07.001
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Glass/SnO2/TiO2, one interfacial composite semiconductor film with high photocatalytic activity, was prepared by depositing anatase TiO2 film on rutile SnO2 film. AES depth profile analyses of the film photocatalyst testified the bilayer structure of the sample. The glass/SnO2/TiO2 film with appropriate thickness of TiO2 layer showed much higher photocatalytic activity in the case of formaldehyde photodegradation compared with glass/TiO2 film. The results could be explained by efficient interfacial charge separation via the process of electron transfer from TiO2 to SnO2. However, when the thickness of TiO2 layer was beyond some certain value, the photocatalytic activity of glass/SnO2/TiO2 film was nearly as same as glass/TiO2 film. The reverse glass/TiO2/SnO2 composite film did not show higher photocatalytic activity than glass/TiO2 film. This emphasized that the proper sequence for depositing individual semiconductor layer on glass substrate was important. A schematic mechanism of charge transfer was presented. (C) 2003 Elsevier B.V All rights reserved.
引用
收藏
页码:25 / 32
页数:8
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