Photosensitization of composite metal oxide semiconductor films

被引:15
作者
Bedja, I
Hotchandani, S
Kamat, PV
机构
[1] UNIV QUEBEC,GRP RECH ENERGIE & INFORMAT BIOMOL,TROIS RIVIERES,PQ GA9 5H7,CANADA
[2] UNIV NOTRE DAME,RADIAT LAB,NOTRE DAME,IN 46556
来源
BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS | 1997年 / 101卷 / 11期
关键词
colloids; films; photoelectrochemistry; photosensitization; semiconductors; surfaces;
D O I
10.1002/bbpc.19971011118
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
New approach of surface modification consisting on mixing SnO2 and TiO2 colloids and packing them as a composite film (SnO2-TiO2) on a conducting glass surface has led to the increased sensitized photocurrent quantum yields. The photoinjected electrons from the sensitizer into TiO2 are quickly transferred into lower lying conduction band of SnO2 carriers thus promoting the charge separation. High internal photocurrent quantum yield for CdS film as sensitizer, approaching unity (Phi = 95%), has been obtained. In addition, composite SnO2-TiO2 nanocrystalline films improve the charge separation in adsorbed bis(2,2'-bipyridine)(2,2'-bipyridine-4,4'-dicarboxylic acid) ruthenium complex (Ru(II)) too. Higher internal photocurrent quantum yield (Phi = 92%) has been obtained for Ru(II) by replacing SnO2 carriers against composite SnO2-TiO2 particles in the film. On the other hand, the later composition does not show any increase in the photovoltage.
引用
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页码:1651 / 1653
页数:3
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