Electrodeposition of CuInSe2 thin films and their characteristics

被引:22
作者
Al-Bassam, AAI [1 ]
机构
[1] King Saud Univ, Coll Sci, Dept Phys, Riyadh 11451, Saudi Arabia
来源
PHYSICA B | 1999年 / 266卷 / 03期
关键词
electrodeposition; CuInSe2; thin films;
D O I
10.1016/S0921-4526(98)01150-8
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Polycrystalline thin films of CuInSe2, (CIS) were deposited by the electrochemical method. Some of the physical properties such as lattice parameters. crystal structure and X-ray data of CuInSe2 (CIS) films with different Cu/In ratios (0.49-1.1) were determined using X-ray diffractometry. A structural transition from chalcopyrite to sphalerite was observed on the electrodeposited CuInSe2 when the compositions of the thin films were varied from a quasi-stoichiometry to indium rich. The surface morphology with different Cu/In ratios was studied using a scanning electron microscope. Quasi-stoichiometric CuInSe2, thin films were obtained in the chalcopyrite structure with grain sizes of the matter of 0.60 mu m. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:192 / 197
页数:6
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