Single atom scale lithography for single electron devices

被引：7

作者：

Ahmed, H

机构：

[1] Microelectronics Research Centre, Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE, Madingley Road

来源：

PHYSICA B | 1996年 / 227卷 / 1-4期

关键词：

atom; lithography; Coulomb blockade;

D O I：

10.1016/0921-4526(96)00415-2

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 [凝聚态物理];

摘要：

A technique for fabricating atomic scale metallic and semiconductor nanostructures is described. A retarding field focused ion beam is used with a detector which can sense the arrival of single ions. Gold nanodots with diameters around 1-2 nm are formed when the ion landing energy is around 300 eV. The method has been used to fabricate Coulomb blockade devices operating at temperatures greater than 4.2 K.

引用

页码：259 / 263

页数：5

共 6 条

[1]

RESOLUTION LIMITS FOR ELECTRON-BEAM LITHOGRAPHY [J].