FOCUSED ION-BEAM DIRECT DEPOSITION OF GOLD

被引:32
作者
NAGAMACHI, S [1 ]
YAMAKAGE, Y [1 ]
MARUNO, H [1 ]
UEDA, M [1 ]
SUGIMOTO, S [1 ]
ASARI, M [1 ]
ISHIKAWA, J [1 ]
机构
[1] KYOTO UNIV,DEPT ELECTR,SAKYO KU,KYOTO 60601,JAPAN
关键词
D O I
10.1063/1.109453
中图分类号
O59 [应用物理学];
学科分类号
摘要
Focused ion beam direct deposition has been developed as a new technique for making patterned metal film directly on substrates. The 20 keV Au+ ion beam is focused, deflected, and finally decelerated to 30-200 eV between the objective lens and substrate. The decelerated beam is deposited on the substrate at room temperature. The beam diameter can be tuned between 0.5 and 8 mum and the beam current varies from 40 pA to 10 nA, corresponding to the beam diameter. Current density was about 20 mA/cm2, so that the deposition rate in the beam spot was estimated about 0.02 mum/s. The purity of gold film was measured with Auger electron spectroscopy and contents of carbon and oxygen, undesirable impurities, were below detection limits. The resistivity was constant at 3.7 +/- 0.1 muOMEGA cm for deposition over the ion energy range of 34-194 eV.
引用
收藏
页码:2143 / 2145
页数:3
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