Detection mechanism of metal oxide gas sensor under UV radiation

被引：139

作者：

Mishra, S

Ghanshyam, C

Ram, N

Bajpai, RP

Bedi, RK

机构：

[1] Cent Sci Instruments Org, Microelect Instrumentat Div, Chandigarh 160020, India

[2] GND Univ, Dept Phys, Mat Sci Lab, Amritsar, Punjab, India

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 2004年 / 97卷 / 2-3期

关键词：

UV radiation; gas sensor; metal oxide; grain size; sensitivity; grain boundary;

D O I：

10.1016/j.snb.2003.09.017

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

The effect of ultraviolet radiation on the sensing mechanism of polycrystalline metal oxide gas sensor has been studied analytically. The model used to describe the sensing mechanism is based on the combination of the neck mechanism and grain boundary mechanism. We found that increasing the UV radiation flux density increases the conductivity of the film by decreasing the resistance. It has been shown theoretically that due to incident UV radiation, it is possible to detect the gas even at room temperature. The effect of radiation on the sensitivity is discussed as a function of grain size and chemisorbed gas concentration. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：387 / 390

页数：4

共 8 条

[1] Photosensitivity activation of SnO2 thin film gas sensors at room temperature [J].