High output power InGaN ultraviolet light-emitting diodes fabricated on patterned substrates using metalorganic vapor phase epitaxy

被引:359
作者
Tadatomo, K
Okagawa, H
Ohuchi, Y
Tsunekawa, T
Imada, Y
Kato, M
Taguchi, T
机构
[1] Mitsubishi Cable Ind Ltd, Photon Res Lab, Itami, Hyogo 6640027, Japan
[2] Stanley Elect Co Ltd, Dept Res & Dev, Yokohama, Kanagawa 2250014, Japan
[3] Yamaguchi Univ, Fac Engn, Yamaguchi 7558611, Japan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2001年 / 40卷 / 6B期
关键词
GaN; InGaN; UV-LED; SAG; ELO; sapphire; MOVPE;
D O I
10.1143/JJAP.40.L583
中图分类号
O59 [应用物理学];
学科分类号
摘要
Ultraviolet (UV) light-emitting diodes (LEDs) with an InGaN multi-quantum-well (MQW) structure were fabricated on a patterned sapphire substrate (PSS) using a single growth process of metalorganic vapor phase epitaxy. In this study, the PSS with parallel grooves along the [11 (2) over bar0](sapphire) direction was fabricated by standard photolithography and subsequent reactive ion etching (RIE). The GaN layer grown by lateral epitaxy on a patterned substrate (LEPS) has a dislocation density of 1.5 x 10(8) cm(-2). The LEPS-UV-LED chips were mounted on the Si bases in a flip-chip bonding arrangement. When the LEPS-UV-LED was operated at a forward-bias current of 20 mA at room temperature, the emission wavelength, the output power and the external quantum efficiency were estimated to be 382 nm, 15.6 mW and 24%, respectively. With increasing forward-bias current, the output power increased linearly and was estimated to be approximately 38 mW at 50 mA.
引用
收藏
页码:L583 / L585
页数:3
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