Random telegraph signals and low-frequency noise in n-metal-oxide-semiconductor field-effect transistors with ultranarrow channels

被引：17

作者：

Bu, HM ^{[1
]}

Shi, Y

Yuan, XL

Wu, J

Gu, SL

Zheng, YD

Majima, H

Ishikuro, H

Hiramoto, T

机构：

[1] Nanjing Univ, Dept Phys, Nanjing 210093, Peoples R China

[2] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China

[3] Univ Tokyo, Inst Ind Sci, Tokyo 1068558, Japan

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 22期

关键词：

D O I：

10.1063/1.126600

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The characteristics of low-frequency noise in n-metal-oxide-semiconductor field-effect transistors with ultranarrow channels have been investigated through random telegraph signals and low-frequency noise spectroscopy. Random telegraph signals with very large amplitude (similar to 70%) are observed in weak inversion at room temperature. Low-frequency noise spectra having both 1/f(n) and Lorentzian type are found separately in the same channel at various gate bias voltages. The observations strongly suggest that the low-frequency noise is dominated by carrier mobility fluctuation in weak inversion and by carrier number fluctuation under high-field conditions in an ultranarrow channel. (C) 2000 American Institute of Physics. [S0003-6951(00)03122-3].

引用

页码：3259 / 3261

页数：3

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