Extremely large amplitude random telegraph signals in a very narrow split-gate MOSFET at low temperatures

被引：5

作者：

Ishikuro, H ^{[1
]}

Saraya, T ^{[1
]}

Hiramoto, T ^{[1
]}

Ikoma, T ^{[1
]}

机构：

[1] TEXAS INSTRUMENTS INC,TSUKUBA RES & DEV CTR,TSUKUBA,IBARAKI 305,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1996年 / 35卷 / 2B期

关键词：

random telegraph signal; single electron trap; MOSFET; split-gate; potential fluctuations;

D O I：

10.1143/JJAP.35.858

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have observed very large amplitude (approximate to 90%) random telegraph signals (RTS) near the pinch-off voltage at very low temperature (1.5 K) in a very narrow, short channel n-MOSFET fabricated by a split-gate technique on an silicon on insulator (SOI) substrate. This large amplitude of RTS can be explained by numerical calculation which takes the potential of the charged trap into account.

引用

页码：858 / 860

页数：3

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