EXISTENCE OF DOUBLE-CHARGED OXIDE TRAPS IN SUB-MICRON MOSFETS

被引：22

作者：

NAKAMURA, H ^{[1
]}

YASUDA, N ^{[1
]}

TANIGUCHI, K ^{[1
]}

HAMAGUCHI, C ^{[1
]}

TORIUMI, A ^{[1
]}

机构：

[1] TOSHIBA CO LTD, ULSI RES CTR, KAWASAKI 210, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1989年 / 28卷 / 11期

关键词：

D O I：

10.1143/JJAP.28.2057

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L2057 / L2060

页数：4

共 13 条

[1] ELECTRONIC-PROPERTIES OF TWO-DIMENSIONAL SYSTEMS
ANDO, T
FOWLER, AB
STERN, F
[J]. REVIEWS OF MODERN PHYSICS, 1982, 54 (02) : 437 - 672
[2] SINGLE ELECTRON SWITCHING EVENTS IN NANOMETER-SCALE SI MOSFETS
HOWARD, RE
SKOCPOL, WJ
JACKEL, LD
MANKIEWICH, PM
FETTER, LA
TENNANT, DM
EPWORTH, R
RALLS, KS
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (09) : 1669 - 1674
[3] AN AUTOMATED-SYSTEM FOR MEASUREMENT OF RANDOM TELEGRAPH NOISE IN METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS
HUNG, KK
KO, PK
HU, C
CHENG, YC
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (06) : 1217 - 1219
[4] CAPTURE AND EMISSION KINETICS OF INDIVIDUAL SI-SIO2 INTERFACE STATE S
KIRTON, MJ
UREN, MJ
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (19) : 1270 - 1272
[5] NANOMETER METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS - A FLEXIBLE TOOL FOR STUDYING INVERSION LAYER PHYSICS
MANKIEWICH, PM
HOWARD, RE
JACKEL, LD
SKOCPOL, WJ
TENNANT, DM
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (01): : 380 - 382
[6] DISCRETE RESISTANCE SWITCHING IN SUBMICROMETER SILICON INVERSION-LAYERS - INDIVIDUAL INTERFACE TRAPS AND LOW-FREQUENCY (1-F QUESTIONABLE) NOISE
RALLS, KS
SKOCPOL, WJ
JACKEL, LD
HOWARD, RE
FETTER, LA
EPWORTH, RW
TENNANT, DM
[J]. PHYSICAL REVIEW LETTERS, 1984, 52 (03) : 228 - 231
[7] INDIVIDUAL OXIDE TRAPS AS PROBES INTO SUB-MICRON DEVICES
RESTLE, P
[J]. APPLIED PHYSICS LETTERS, 1988, 53 (19) : 1862 - 1864
[8] SELF-CONSISTENT RESULTS FOR N-TYPE SI INVERSION LAYERS
STERN, F
[J]. PHYSICAL REVIEW B, 1972, 5 (12): : 4891 - &
[9] PROPERTIES OF SEMICONDUCTOR SURFACE INVERSION LAYERS IN ELECTRIC QUANTUM LIMIT
STERN, F
HOWARD, WE
[J]. PHYSICAL REVIEW, 1967, 163 (03): : 816 - &
[10] 1/F AND RANDOM TELEGRAPH NOISE IN SILICON METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS
UREN, MJ
DAY, DJ
KIRTON, MJ
[J]. APPLIED PHYSICS LETTERS, 1985, 47 (11) : 1195 - 1197

← 1 2 →