AN AUTOMATED-SYSTEM FOR MEASUREMENT OF RANDOM TELEGRAPH NOISE IN METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS

被引：18

作者：

HUNG, KK ^{[1
]}

KO, PK ^{[1
]}

HU, C ^{[1
]}

CHENG, YC ^{[1
]}

机构：

[1] UNIV HONG KONG,DEPT ELECT & ELECTR ENGN,HONG KONG,HONG KONG

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 06期

关键词：

D O I：

10.1109/16.24373

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1217 / 1219

页数：3

相关论文

共 5 条

[1] INDIVIDUAL INTERFACE STATES AND THEIR IMPLICATIONS FOR LOW-FREQUENCY NOISE IN MOSFETS
KIRTON, MJ
UREN, MJ
COLLINS, S
[J]. APPLIED SURFACE SCIENCE, 1987, 30 (1-4) : 148 - 152
[2] CAPTURE AND EMISSION KINETICS OF INDIVIDUAL SI-SIO2 INTERFACE STATE S
KIRTON, MJ
UREN, MJ
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (19) : 1270 - 1272
[3] NOISE IN SEMICONDUCTORS - SPECTRUM OF A 2-PARAMETER RANDOM SIGNAL
MACHLUP, S
[J]. JOURNAL OF APPLIED PHYSICS, 1954, 25 (03) : 341 - 343
[4] DISCRETE RESISTANCE SWITCHING IN SUBMICROMETER SILICON INVERSION-LAYERS - INDIVIDUAL INTERFACE TRAPS AND LOW-FREQUENCY (1-F QUESTIONABLE) NOISE
RALLS, KS
SKOCPOL, WJ
JACKEL, LD
HOWARD, RE
FETTER, LA
EPWORTH, RW
TENNANT, DM
[J]. PHYSICAL REVIEW LETTERS, 1984, 52 (03) : 228 - 231
[5] 1/F AND RANDOM TELEGRAPH NOISE IN SILICON METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS
UREN, MJ
DAY, DJ
KIRTON, MJ
[J]. APPLIED PHYSICS LETTERS, 1985, 47 (11) : 1195 - 1197