INDIVIDUAL OXIDE TRAPS AS PROBES INTO SUB-MICRON DEVICES

被引：46

作者：

RESTLE, P

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 19期

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D O I：

10.1063/1.100378

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1862 / 1864

页数：3

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[1] BACCARANI G, 1985, 4 P NASE CODE C DUBL, V4, P3
[2] BLACK RD, 1983, PHYS REV B, V28, P2333
[3] SINGLE ELECTRON SWITCHING EVENTS IN NANOMETER-SCALE SI MOSFETS
HOWARD, RE
SKOCPOL, WJ
JACKEL, LD
MANKIEWICH, PM
FETTER, LA
TENNANT, DM
EPWORTH, R
RALLS, KS
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (09) : 1669 - 1674
[4] CAPTURE AND EMISSION KINETICS OF INDIVIDUAL SI-SIO2 INTERFACE STATE S
KIRTON, MJ
UREN, MJ
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (19) : 1270 - 1272
[5] NANOMETER METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS - A FLEXIBLE TOOL FOR STUDYING INVERSION LAYER PHYSICS
MANKIEWICH, PM
HOWARD, RE
JACKEL, LD
SKOCPOL, WJ
TENNANT, DM
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (01): : 380 - 382
[6] DISCRETE RESISTANCE SWITCHING IN SUBMICROMETER SILICON INVERSION-LAYERS - INDIVIDUAL INTERFACE TRAPS AND LOW-FREQUENCY (1-F QUESTIONABLE) NOISE
RALLS, KS
SKOCPOL, WJ
JACKEL, LD
HOWARD, RE
FETTER, LA
EPWORTH, RW
TENNANT, DM
[J]. PHYSICAL REVIEW LETTERS, 1984, 52 (03) : 228 - 231
[7] NON-GAUSSIAN EFFECTS IN 1-F NOISE IN SMALL SILICON-ON-SAPPHIRE RESISTORS
RESTLE, PJ
HAMILTON, RJ
WEISSMAN, MB
LOVE, MS
[J]. PHYSICAL REVIEW B, 1985, 31 (04): : 2254 - 2262
[8] TESTS OF GAUSSIAN STATISTICAL PROPERTIES OF 1/F NOISE
RESTLE, PJ
WEISSMAN, MB
BLACK, RD
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (10) : 5844 - 5847
[9] 1/F NOISE IN GAAS - EVIDENCE OF A NEW SCALE-INVARIANCE
RESTLE, PJ
WEISSMAN, MB
GARFUNKEL, GA
PEARAH, P
MORKOC, H
[J]. PHYSICAL REVIEW B, 1986, 34 (06): : 4419 - 4422
[10] COMPOSITION OF 1/F NOISE IN METAL-INSULATOR-METAL TUNNEL-JUNCTIONS
ROGERS, CT
BUHRMAN, RA
[J]. PHYSICAL REVIEW LETTERS, 1984, 53 (13) : 1272 - 1275