Photoluminescence of hydrothermally epitaxied ZnO films

被引：34

作者：

Sim, A. Y. L.

Goh, G. K. L.

Tripathy, S.

Andeen, D.

Lange, F. F.

机构：

[1] Inst Mat Res & Engn, Singapore 117602, Singapore

[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

来源：

ELECTROCHIMICA ACTA | 2007年 / 52卷 / 08期

关键词：

zinc oxide; hydrothermal; photoluminescence; morphology; annealing;

D O I：

10.1016/j.electacta.2006.08.049

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

In this study, epitaxial ZnO films were grown hydrothermally on (111)-oriented single crystal MgAl2O4 substrates at 150 degrees C from aqueous precursor solutions. It was observed that the film morphology varied with the pH value of the precursor solution, giving pitted films at higher pH and smooth films at lower pH. The photoluminescence spectra of these ZnO films showed a strong near band-edge ultraviolet emission together with deep level emission bands comprised of green and orange-red luminescence. The green band centred around 500nm was attributed to the presence of Zn vacancies, whereas the orange-red band centred around 650 nm could be related to the presence of oxygen interstitials. (c) 2006 Elsevier Ltd. All rights reserved.

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页码：2933 / 2937

页数：5

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