Diamond deposition on a large-area substrate by plasma-assisted chemical vapor deposition using an antenna-type coaxial microwave plasma generator

被引：20

作者：

Taniyama, N

Kudo, M

Matsumoto, O

Kawarada, H

机构：

[1] Micro Denshi Co Ltd, Kawagoe, Saitama 3500833, Japan

[2] Aoyama Gakuin Univ, Dept Chem, Setagaya Ku, Tokyo 1578572, Japan

[3] Waseda Univ, Dept Elect Informat & Commun Engn, Shinjuku Ku, Tokyo 1690072, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2001年 / 40卷 / 7A期

关键词：

diamond; microwave; plasma; large area; deposition; CVD; heated substrate; coaxial cable; electrode; ACMPG;

D O I：

10.1143/JJAP.40.L698

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Diamond deposition on a large area silicon wafer substrate (phi 100 mm) is achieved with a methane/hydrogen plasma induced by an antenna-type coaxial microwave plasma generator. Deposition of diamond is observed over the entire substrate. Diamond precursors arc emitted radially onto a silicon substrate from the plasma sphere generated at the tip of the antenna. The possibility of diamond deposition outside the plasma sphere is discussed using a semi-empirical equation.

引用

页码：L698 / L700

页数：3

共 5 条

[1]

BARDOS L, 1998, ZH TEKH FIZ, V68, P29

[2] Selected-area deposition of diamond films on silicon nitride-coated silicon substrates using negatively biased microwave plasma enhanced chemical vapor deposition technique [J].