Electrical properties of BST thin films fabricated by a modified sol-gel processing

被引：14

作者：

Jiang, SL ^{[1
]}

Zhang, HB

Lin, RZ

Liu, SB

Liu, MD

机构：

[1] Huazhong Univ Sci & Technol, Dept Elect Sci & Technol, Wuhan 430074, Peoples R China

[2] Chinese Acad Sci, Inst Elect Engn, Beijing 100080, Peoples R China

来源：

INTEGRATED FERROELECTRICS | 2005年 / 70卷

基金：

中国国家自然科学基金;

关键词：

modified Sol-Gel processing; BST thin films; electrical properties;

D O I：

10.1080/10584580590926620

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A modified Sol-Gel process was used to get the higher-performance BST thin films. The BST thin films possessed different composites and structures in the substrate of Pt/Ti/SiO2/Si. The microstructure, morphology and the electrical properties of the prepared BST thin films were investigated via X-ray diffractometry, scanning electron microscopy techniques and measurement techniques. The results show that the optimum processing for BST films is RTA750 degrees C x 20 min and with sandwich structure seed layers. BST20 film with good resistivity, comparatively dielectric and ferroelectric properties is practical for the detecting materials of UFPA. The system with dielectric constant of 405, loss tangent of 0.011, remanent polarization of 2.3 mu C cm(-2), a coercive field of 45 kV cm(-1) can be obtained by the modified Sol-Gel processing.

引用

页码：1 / 9

页数：9

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