Defect Functionalization of Hexagonal Boron Nitride Nanosheets

被引:229
作者
Lin, Yi [1 ]
Williams, Tiffany V. [2 ]
Cao, Wei [3 ]
Elsayed-Ali, Hani E. [3 ]
Connell, John W. [2 ]
机构
[1] Natl Inst Aerosp, Hampton, VA 23666 USA
[2] NASA Langey Res Ctr, Adv Mat & Proc Branch, Hampton, VA 23681 USA
[3] Old Dominion Univ, Appl Res Ctr, Newport News, VA 23606 USA
关键词
STONE-WALES DEFECTS; NANOTUBES; SOLUBILIZATION; TEMPERATURES; REACTIVITY; GRAPHENE;
D O I
10.1021/jp105454w
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
A pristine hexagonal boron nitride (h-BN) powder sample with layered crystalline shectlike particles of similar to 1-10 pm in lateral sizes and a few hundred nanometers in thicknesses was mechanically treated using a ball-mill to intentionally introduce defect sites. h-BN was ball-milled for various tunes and subsequently was functionalized with a long alkyl chain amine via Lewis acid-base interactions between the amino groups and the boron atoms of h-BN to obtain soluble amine-attached nanosheet samples as the products. The functionalized h-ON nanosheet samples were characterized via various microscopic and spectroscopic techniques. The results strongly support a direct correlation between increasing defect site concentrations of the h-ON nanosheet samples and improved reaction efficiency with the amine. This suggests the enhanced reactivity of defect boron atoms in comparison to conjugated ones arm an unperturbed h-ON plane. NMR investigations provided the strongest evidence supporting the hypothesis that the amino groups reacted with the h-ON at specific defect sites induced by ball-milling. The mechanistic implications are discussed.
引用
收藏
页码:17434 / 17439
页数:6
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