Atomically thin hexagonal boron nitride probed by ultrahigh-resolution transmission electron microscopy

被引：444

作者：

Alem, Nasim ^{[1
,2
]}

Erni, Rolf ^{[3
,4
]}

Kisielowski, Christian ^{[3
,4
]}

Rossell, Marta D. ^{[3
,4
]}

Gannett, Will ^{[1
,3
]}

Zettl, A. ^{[1
,2
,3
]}

机构：

[1] Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA

[2] Univ Calif Berkeley, Ctr Integrated Nanomech Syst, Berkeley, CA 94720 USA

[3] Univ Calif Berkeley, Lawrence Berkeley Lab, Div Mat Sci, Berkeley, CA 94720 USA

[4] Univ Calif Berkeley, Lawrence Berkeley Lab, Natl Ctr Electron Microscopy, Berkeley, CA 94720 USA

来源：

PHYSICAL REVIEW B | 2009年 / 80卷 / 15期

基金：

美国国家科学基金会;

关键词：

CARBON NANOTUBES; GRAPHENE; MEMBRANES; CRYSTALS; DEFECTS; DAMAGE; FILMS;

D O I：

10.1103/PhysRevB.80.155425

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present a method to prepare monolayer and multilayer suspended sheets of hexagonal boron nitride (h-BN), using a combination of mechanical exfoliation and reactive ion etching. Ultrahigh-resolution transmission electron microscope imaging is employed to resolve the atoms, and intensity profiles for reconstructed phase images are used to identify the chemical nature (boron or nitrogen) of every atom throughout the sample. Reconstructed phase images are distinctly different for h-BN multilayers of even or odd number. Unusual triangular defects and zigzag and armchair edge reconstructions are uniquely identified and characterized.

引用

页数：7

共 29 条

[1] Defect lines and two-domain structure of hexagonal boron nitride films on Ni(111) [J].

Auwärter, W ;

Muntwiler, M ;

Osterwalder, J ;

Greber, T .

SURFACE SCIENCE, 2003, 545 (1-2) :L735-L740

[2] Electronic structure of defects in a boron nitride monolayer [J].

Azevedo, S. ;

Kaschny, J. R. ;

de Castilho, C. M. C. ;

Mota, F. de Brito .

EUROPEAN PHYSICAL JOURNAL B, 2009, 67 (04) :507-512

[3] Frustration effects and microscopic growth mechanisms for BN nanotubes [J].

Blase, X ;

De Vita, A ;

Charlier, JC ;

Car, R .

PHYSICAL REVIEW LETTERS, 1998, 80 (08) :1666-1669

[4] BORON-NITRIDE NANOTUBES [J].

CHOPRA, NG ;

LUYKEN, RJ ;

CHERREY, K ;

CRESPI, VH ;

COHEN, ML ;

LOUIE, SG ;

ZETTL, A .

SCIENCE, 1995, 269 (5226) :966-967

[5] Anisotropic electron-beam damage and the collapse of carbon nanotubes [J].

Crespi, VH ;

Chopra, NG ;

Cohen, ML ;

Zettl, A ;

Louie, SG .

PHYSICAL REVIEW B, 1996, 54 (08) :5927-5931

[6] Structure of boron nitride nanotubules [J].

Demczyk, BG ;

Cumings, J ;

Zettl, A ;

Ritchie, RO .

APPLIED PHYSICS LETTERS, 2001, 78 (18) :2772-2774

[7] Beam-induced damage to thin specimens in an intense electron probe [J].

Egerton, RF ;

Wang, F ;

Crozier, PA .

MICROSCOPY AND MICROANALYSIS, 2006, 12 (01) :65-71

[8]

*EPAPS, EPRBMDO80091935 EPAP

[9] Graphene at the Edge: Stability and Dynamics [J].

Girit, Caglar Oe ;

Meyer, Jannik C. ;

Erni, Rolf ;

Rossell, Marta D. ;

Kisielowski, C. ;

Yang, Li ;

Park, Cheol-Hwan ;

Crommie, M. F. ;

Cohen, Marvin L. ;

Louie, Steven G. ;

Zettl, A. .

SCIENCE, 2009, 323 (5922) :1705-1708

[10] Electronic structure of defects and impurities in III-V nitrides: Vacancies in cubic boron nitride [J].

Gubanov, VA ;

Lu, ZW ;

Klein, BM ;

Fong, CY .

PHYSICAL REVIEW B, 1996, 53 (08) :4377-4385

← 1 2 3 →